Формирование методом молекулярно-пучковой эпитаксии с плазменной активацией азота гетероструктур с множественными квантовыми ямами InN/InGaN на сапфире

The features of the process growth multilayer heterostructures with InN/InGaN quantum wells (QWs) by method molecular-beam epitaxy nitrogen plasma activation in mode modulated metal fluxes are studied. To compensate for elastic stresses structure, active region was formed form an superlattice matched over average lattice parameter underlying InGaN buffer layer. It has been shown that during relatively narrow InN QWs up to 3 nm wide, there is no relaxation and dislocation density remains at level ND ∼ (3−4) · 10^10 cm−2, which corresponds buffer. Such structures demonstrate most intense PL wavelength range 1.3−1.5 µm. With wider QWs, imperfection sharply increases (ND > 10^11 cm−2), accompanied a decrease emission intensity. grown demonstrated order magnitude better temperature stability compared bulk layers (PL quenching 25 times, respectively, 77−300 K). Nevertheless, low (T = 77 K), intensity studied noticeably inferior layer, apparently indicates significant role nonradiative recombination Shockley−Reed−Hall mechanism (as opposed Auger InN).